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Omron EE-SX672A Photo MicroSensor

Omron
Availability:

50 in stock


  • Brand  :  Omron
  • Output : NPN open-collector transistor
  • Supply Voltage : 05..24 VDC
  • Operation mode  : Dark-ON, Light-ON

775.00 1,143.00 GST Extra

50 in stock

The Omron EE-SX672A Photo MicroSensor is designed for precise detection tasks. It features a Grooved Type (T-shaped) design with a slot center of 7 mm. Operating on a through-beam sensing method, it offers Dark-ON/Light-ON operation modes for flexibility in detection. The sensor can detect opaque objects as small as 2 x 0.8 mm min. Additionally, it boasts minimal differential distance elements of 0.025 mm.

Equipped with an infrared LED light source emitting at a peak wavelength of 940 nm, the Omron EE-SX672A Photo MicroSensor ensures reliable detection in various environments. It features NPN open collector output and operates within a wide power supply voltage range of 5 to 24 VDC. With a low current consumption of 12 mA (L terminal open), it offers energy-efficient operation.

Constructed with durable materials such as polybutylene terephthalate (PBT) for the case and polycarbonate (PC) for the emitter/receiver cover, the EE-SX672A ensures longevity and reliability in operation. Originating from Japan, it combines advanced technology with robust construction, making it a preferred choice for precise detection tasks in industrial automation applications.

Our engineers meticulously inputted all the necessary details of this sensor following the datasheet guidelines. However, it’s crucial to acknowledge the potential for errors during this process. Despite our diligent efforts, it’s imperative to remain vigilant as inaccuracies may persist despite our sincere endeavors.

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SKU: NTSSEN00352 Category: Tag:
Weight 90 g
Dimensions 12 × 12 × 12 cm
Brands

Omron

Condition

New

ModelEE-SX672A
MakeOmron
Product Category:Photo Microsensor
TypeGrooved Type (T-shaped) (Slot center 7 mm)
Luminous methodNon-modulated
Sensing methodThrough-beam type
Sensing distanceSlot width: 5 mm
Operation modeDark-ON/Light-ON (selectable)
Standard sensing objectOpaque, 2 x 0.8 mm min.
Differential distance elements0.025 mm max.
Light source (Peak wavelength)Infrared LED (940 nm)
IndicatorNo incident light (red)
Power supply voltage5 to 24 VDC ±10%
ripple (p-p) 10 % max.
Current consumption12 mA (L terminal open)
Output typeNPN open collector output
Load power supply voltage5 to 24 VDC
Load curren100 mA max.
Residual voltageat 100 mA load current: 0.8 V max.
at 40 mA load current: 0.4 V max.
Protection circuitsOutput short-cut protection
Response frequency elements1 kHz min.
Average value: 3 kHz
Illumination on the surface receiverFluorescent light: 1000 lx max.
Ambient temperatureOperating: -25 to 55 ℃ (with no freezing or condensation)
Storage: -30 to 80 ℃ (with no freezing or condensation)
Ambient humidityOperating: 5 to 85 % (with no condensation)
Storage: 5 to 95 % (with no condensation)
Vibration resistanceDestruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods)
Shock resistanceDestruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Degree of protectionIP50
Connection methodConnector type (Direct soldering possible)
WeightPackage: Approx. 2.4 g
MaterialCase: Polybutylene terephthalate (PBT)
Emitter/Receiver Cover: Polycarbonate (PC)
Country of originJapan

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