Omron EE-SX671A Photo Micro Sensor
17 in stock
- Brand : Omron
- Output : NPN open-collector transistor
- Supply Voltage : 05..24 VDC
- Operation mode : Dark-ON, Light-ON
₹575.00 ₹1,143.00 GST Extra
17 in stock
The Omron EE-SX671A Photo MicroSensor is designed with a Grooved Type (L-shaped) configuration. It operates using a through-beam sensing method with a slot width of 5 mm. The sensor offers Dark-ON/Light-ON selectable operation modes, providing flexibility in detection scenarios.
Omron EE-SX671A Photo MicroSensor is capable of detecting small opaque objects with a minimum size of 2 x 0.8 mm, with minimal differential distance elements of 0.025 mm. Equipped with an infrared LED light source emitting at a peak wavelength of 940 nm, the EE-SX671A ensures reliable detection. It features NPN open collector output and a wide power supply voltage range of 5 to 24 VDC.
Crafted with durable materials such as polybutylene terephthalate (PBT) for the case and polycarbonate (PC) for the emitter/receiver cover, the EE-SX671A guarantees longevity and reliability. It offers protection circuits like output short-cut protection, along with vibration resistance up to 100 m/s2 and shock resistance up to 500 m/s2. With its compact and lightweight design, the EE-SX671A is easy to handle and install, suitable for various industrial automation applications.
Our engineers meticulously inputted all the necessary details of this sensor following the datasheet guidelines. However, it’s crucial to acknowledge the potential for errors during this process. Despite our diligent efforts, it’s imperative to remain vigilant as inaccuracies may persist despite our sincere endeavors.
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| Weight | 80 g |
|---|---|
| Dimensions | 21 × 13 × 04 cm |
| Brands | Omron |
| Condition | New |
| Model | EE-SX671A |
| Make | Omron |
| Product Category: | Photo Microsensor |
| Type | Grooved Type (L-shaped) |
| Luminous method | Non-modulated |
| Sensing method | Through-beam type |
| Sensing distance | Slot width: 5 mm |
| Operation mode | Dark-ON/Light-ON (selectable) |
| Standard sensing object | Opaque, 2 x 0.8 mm min. |
| Differential distance elements | 0.025 mm max. |
| Light source （Peak wavelength） | Infrared LED (940 nm) |
| Indicator | No incident light (red) |
| Power supply voltage | 5 to 24 VDC ±10% ripple (p-p) 10 % max. |
| Current consumption | 12 mA (L terminal open) |
| Output type | NPN open collector output |
| Load power supply voltage | 5 to 24 VDC |
| Load curren | 100 mA max. |
| Residual voltage | at 100 mA load current: 0.8 V max. at 40 mA load current: 0.4 V max. |
| Protection circuits | Output short-cut protection |
| Response frequency elements | 1 kHz min. Average value: 3 kHz |
| Illumination on the surface receiver | Fluorescent light: 1000 lx max. |
| Ambient temperature | Operating: -25 to 55 ℃ (with no freezing or condensation) Storage: -30 to 80 ℃ (with no freezing or condensation) |
| Ambient humidity | Operating: 5 to 85 % (with no condensation) Storage: 5 to 95 % (with no condensation) |
| Vibration resistance | Destruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods) |
| Shock resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions |
| Degree of protection | IP50 |
| Connection method | Connector type (Direct soldering possible) |
| Weight | Package: Approx. 3 g |
| Material | Case: Polybutylene terephthalate (PBT) Emitter/Receiver Cover: Polycarbonate (PC) |
| Country of origin | Japan |
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