Omron EE-SX671-WR Photo MicroSensor
10 in stock
- Brand : Omron
- Output : NPN open-collector transistor
- Supply Voltage : 05..24 VDC
- Operation mode : Dark-ON, Light-ON
₹1,675.00 ₹2,339.00 GST Extra
10 in stock
The Omron EE-SX671-WR Photo MicroSensor is engineered for precise detection tasks. Equipped with an infrared LED light source with a peak wavelength of 940 nm, it ensures consistent and reliable detection across diverse industrial environments. Its durable construction, incorporating materials such as polybutylene terephthalate (PBT) for the case, enhances longevity and reliability in operation.
Additionally, the sensor features a pre-wired connection and a 1-meter cable, simplifying installation and integration into existing systems. Originating from China, the EE-SX671-WR combines advanced technology with robust construction, making it a preferred choice for precise detection tasks in industrial automation applications.
The Omron EE-SX671-WR Photo MicroSensor is crafted with durable materials such as polybutylene terephthalate (PBT) for the case. This ensures longevity and reliability in its operation. Additionally, the emitter/receiver cover is made from polycarbonate (PC), further enhancing its durability and resilience. Originating from China, the EE-SX671-WR combines advanced technology with robust construction. This makes it a preferred choice for precise detection tasks in industrial automation applications.
Our engineers meticulously inputted all the necessary details of this sensor following the datasheet guidelines. However, it’s crucial to acknowledge the potential for errors during this process. Despite our diligent efforts, it’s imperative to remain vigilant as inaccuracies may persist despite our sincere endeavors.
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| Weight | 80 g |
|---|---|
| Dimensions | 21 × 13 × 04 cm |
| Brands | Omron |
| Condition | New |
| Model | EE-SX671-WR |
| Make | Omron |
| Product Category: | Photo Microsensor |
| Type | Grooved Type (L-shaped) |
| Luminous method | Non-modulated |
| Sensing method | Through-beam type |
| Sensing distance | Slot width: 5 mm |
| Operation mode | Dark-ON/Light-ON (selectable) |
| Standard sensing object | Opaque, 2 x 0.8 mm min. |
| Differential distance elements | 0.025 mm max. |
| Light source （Peak wavelength） | Infrared LED (940 nm) |
| Indicator | Light indicator (red) |
| Power supply voltage | 5 to 24 VDC ±10% ripple (p-p) 10 % max. |
| Current consumption | 35 mA |
| Output type | NPN open collector output |
| Load power supply voltage | 5 to 24 VDC |
| Load curren | 100 mA max. |
| Residual voltage | at 100 mA load current: 0.8 V max. at 40 mA load current: 0.4 V max. |
| Response frequency elements | 1 kHz min. Average value: 3 kHz |
| Illumination on the surface receiver | Fluorescent light: 1000 lx max. |
| Ambient temperature | Operating: -25 to 55 ℃ (with no freezing or condensation) Storage: -30 to 80 ℃ (with no freezing or condensation) |
| Ambient humidity | Operating: 5 to 85 % (with no condensation) Storage: 5 to 95 % (with no condensation) |
| Vibration resistance | Destruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods) |
| Shock resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions |
| Degree of protection | IP50 |
| Connection method | Pre-wired models |
| Cable length | 1 m |
| Weight | Package: Approx. 17.3 g |
| Material | Case: Polybutylene terephthalate (PBT) Emitter/Receiver Cover: Polycarbonate (PC) |
| Country of origin | China |
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